METHOD OF MANUFACTURING A DIELECTRIC FILM AND METHOD OF MANUFACTURING METAL INSULATOR METAL CAPACITOR HAVING THE DIELECTRIC FILM AND BATCH TYPE ATOMIC LAYER DEPOSITION APPARATUS FOR MANUFACTURING THE DIELECTRIC FILM

摘要

The present invention provides the methods of manufacture dielectric film, including forming the first dielectric film on a chip, atomic layer deposition (ALD) is used in a first batch of types of devices, an auxiliary queue film is formed on the first dielectric film, atomic layer deposition is used in a second batch types of devices, wherein auxiliary queue film has a higher crystallization temperature than the first dielectric film and forms third dielectric film on auxiliary queue film, and atomic layer deposition is used in third batch-type apparatus. The method of manufacture metal-insulator-metal (MIM) capacitor of application method is additionally provided, dielectric film is formed and batch-type apparatus for atomic layer deposition is used to form dielectric film.