ArF photoresist composition for patterning ArF photoresist contact hole is provided to control flowing amount of the photoresist during the flowing process, and give ArF photoresist contact hole pattern with microfine width by comprising photosensitive resin containing blocking groups for inducing hydrogen bonds. The composition includes: 10 to 15wt.% of photosensitive resin containing first and second blocking groups to induce hydrogen bonds; 1 to 1.5wt.% of photoacid generator that reacts with light and produces acid; and 83.5 to 89wt.% of organic solvent. The first blocking group includes acetal group and tertiary alcoxy carbonyl group. The second blocking group includes adamantyl group, lacton group and hydroxyl group. Amounts of the first blocking group range from 1 to 2wt.% relative to total weight of the blocking groups.
展开▼
