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DEVICE OF BATCH-TYPE ATOMIC LAYER DEPOSITION AND THE METHOD OF DEPOSITIONING ATOMIC LAYER USING THE SAME

机译:间歇式原子层沉积装置及使用该沉积层的原子层沉积方法

摘要

in a batch-type atomic layer deposition apparatus , and a semiconductor device using the same of the present invention, an atomic layer deposition method , and the reaction chamber; And a plate mounted within the reaction chamber so that a plurality of wafers can be arranged on the upper surface ; And the first rotary part rotatable with the support in the lower plate; And the second rotating part is movable up and down and can rotate the wafer on the plate in the direction of the lower plate ; Is placed on top within the reaction chamber , and a gas supply unit for supplying a source gas and the purge gas on the plate ; And a discharge port for discharging the gas and the by-product supplied to the plate .
机译:在间歇式原子层沉积装置中,使用本发明的半导体装置,原子层沉积方法和反应室;并且在反应室内安装一块板,以便在上表面可以布置多个晶片;并且第一旋转部分可与支撑件一起在下板上旋转;并且第二旋转部件可以上下移动,并且可以使板上的晶片沿下板的方向旋转;放置在反应室的顶部,气体供给单元在板上供给源气体和吹扫气体;还有一个排出口,用于排出提供给板的气体和副产物。

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