METHOD FOR CONTROLLING OXYGEN CONTENT IN SILICON SINGLE CRYSTALLINE INGOT, INGOT AND WAFER PRODUCED THEREBY

摘要

The present invention relates to an oxygen concentration control method of the grown silicon single crystal ingot by the Czochralski method more specifically, characterized in that it controls the convection of oxygen concentration and the silicon melt is eluted from the crucible by controlling the rotational speed of the crucible containing the silicon melt in a silicon single crystal ingot grown with a heater device using an AC current is for the oxygen concentration control method of the silicon single crystal . ; According to the oxygen concentration control method of a silicon single crystal according to the present invention , a variety of specifications for the oxygen concentration by regulating the rotation speed of the quartz crucible in a silicon single crystal ingot growth apparatus provided with a heater that uses the AC current the single crystal silicon ingots and wafers can be produced with high productivity .