THIN FILM TRANSISTOR SUBSTRATE AND METHO OF MANUFACTURING THE SAME AND MASK FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

A thin film transistor substrate, a method for manufacturing the same, and a mask for manufacturing thin film transistor substrate are provided to reduce the trapping effect of electrons by optimizing an active layer exposed by a slit mask between a source electrode and a drain electrode. A plurality of data lines cross a plurality of gate lines(130). A plurality of pixel electrodes are formed on pixel regions which are defined by the gate lines and the data lines. A plurality of gate electrodes(120) are formed on the pixel regions and are connected to the gate lines. A plurality of source electrodes are connected to the source lines. A plurality of drain electrodes are connected to the pixel electrodes. An active layer is exposed between channel regions which are formed the source electrodes and the drain electrodes of a thin film transistor. The active layer is protruded as much as a width of 30 % and less in comparison with a source line width toward the outside of the channel regions.