When the thin film transistor is turned off by minimizing the movement area of electrons between the source and drain electrodes of the thin film transistor, enlarging the moving distance of the electrons, and making the size of the capacitor formed by contacting the gate electrode with each of the source and drain electrodes Disclosed are a thin film transistor substrate capable of minimizing leakage current, a method of manufacturing the same, and a mask for manufacturing the thin film transistor substrate. This can minimize off current induced by the trapping of electrons by light.;Thin Film Transistors, Source Electrodes, Drain Electrodes, Off Current, Leakage Pass
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