NOR Flash Memory Array and Operating Method of the same Using Charge Trap Memory Cell with Multi-Doped Layers

摘要

The present invention relates to a NOR flash memory array using a charge trap memory cell having a plurality of doped layers in an active region and a method of operating the same.;Unlike the structure of the conventional charge trap memory cell, the memory cell used in the present invention appropriately forms a plurality of doping layers in the active region, thereby inducing electrons to be band-band tunneled at the portion forming the PN junction with the source / drain region, The electrons are accelerated in a predetermined reverse bias state to induce an avalanche phenomenon, and the holes generated at this time are injected into the charge trap layers of each charge trap memory cell. The method provides a method of operating a NOR flash memory array by injecting N into a charge trap layer of each cell.;Charge Trap, Flash Memory, Tunneling, Avalanche, NOR