APPARATUS AND METHOD FOR LASER ANNEALING LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY

摘要

An apparatus and a method for laser-annealing a low temperature poly-silicon thin film transistor liquid crystal display are provided to reduce an error rate and enhance density and uniformity by using laser beams. A substrate(310) of a liquid crystal display including amorphous silicon is loaded on a stage(300). A first gantry(320) is installed on the stage in order to be moved in a first direction perpendicular to the stage. A main laser unit(340) anneals the amorphous silicon by irradiating laser beams on the substrate. A first transfer unit(351) moves the main laser unit in a second direction perpendicular to the first direction. A second gantry(330) is installed at the stage in order to be moved in the first direction. A pair of compensatory laser units(350,360) anneal the amorphous silicon by irradiating the laser beams. A second transfer unit(361) moves the compensatory laser units in the second direction.