Method for manufacturing low-temperature poly-silicon thin film transistor, low-temperature poly-silicon thin film transistor and display device

摘要

The present disclosure provides a method for manufacturing an LTPS TFT, including steps of: forming patterns of a p-Si layer and a protection layer on a base substrate, the protection layer covering the p-Si layer; performing a first ion injection operation so as to inject ions through the protection layer into the p-Si layer, thereby to form a heavily-drain-doped region; and performing an ashing operation and performing a second ion injection operation, to form a pattern of an LTPS active layer including a heavily-drain-doped region, a lightly-drain-doped region and an undoped region.