A method for preparing thin film transistorTFT having polycrystalline Si, a thin film transistor prepared by the method and a flat pannel display with the thin film transistor

摘要

The present invention includes the steps of forming an amorphous silicon film on an insulating substrate ; Forming a polycrystalline silicon crystallization method using a crystallization of the amorphous silicon film is laser ; And a method of manufacturing a thin film transistor comprising the steps for the oxygen plasma etching the polysilicon film surface, the thus prepared thin film transistor and to a flat panel display device having the same . ; the transistor of the present invention According to the production method, the polysilicon film, the surface roughness can be obtained while being highly improved silicon crystal is employed substantially undamaged polysilicon film , and a thin film transistor .