A method for preparing thin film transistor having polycrystalline Si layer, a thin film transistor prepared by the method and a flat pannel display comprising the thin film transistor

摘要

A method for manufacturing a TFT(Thin Film Transistor) and the TFT manufactured thereby, and a flat display panel with the same are provided to enhance electrical properties and to improve the reliability by amorphorizing a crystalline silicon grain of an amorphous silicon layer and crystallizing sequentially the resultant silicon layer. A first amorphous silicon layer is formed on a substrate(101). At this time, the first amorphous silicon layer contains a crystalline silicon grain. A second amorphous silicon layer is formed by amorphorizing the crystalline silicon grain of the first amorphous silicon layer. A polycrystalline silicon layer(105'') is formed on the resultant structure by crystallizing the second amorphous silicon layer. An active layer is formed by patterning selectively the polycrystalline silicon layer.