Method for coating alumina thin film by using a Atomic Layer Deposition on the surface of Nanowire and Nanotube

摘要

PURPOSE: Provided is a method for coating an alumina (Al2O3) thin film on the surface of a nanowire and a nanotube to form a uniform alumina thin film coating which can be used as a capacitor dielectric material and a gate oxide and protects the surface of various nano-electronic devices. CONSTITUTION: The method comprises the steps of vertically growing a nanowire and a nanotube on the top part of a substrate; and coating an alumina thin film on the surface of the nanowire and the nanotube by an atomic layer deposition. Preferably the nanowire comprises any one material selected from the group consisting of Si, Ge, GaN, InP, GaAs, GaP, Si3N4, SiO2, SiC, ZnO and Ga2O3; and the precursor material used in the atomic layer deposition is trimethylammonium and water.