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MULTI-VALUED NONVOLATILE MEMORY DEVICE WITH ENHANCED RELIABILITY AND MEMORY SYSTEM HAVING THE SAME
MULTI-VALUED NONVOLATILE MEMORY DEVICE WITH ENHANCED RELIABILITY AND MEMORY SYSTEM HAVING THE SAME
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机译:具有增强的可靠性的多值非易失性存储器和具有相同功能的存储器系统
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摘要
A nonvolatile memory device, memory system and read method are disclosed. The memory device comprises a memory cell array comprising a plurality of memory blocks each having a plurality of memory cells adapted to store N bits, where N is an integer greater than 1, a page buffer configured to perform a read operation adapted to read data from the memory cell array and output read data, an error correction circuit configured to detect and correct an error in read data stored in a memory block K and generate corresponding error information, and a control circuit configured to reduce the number of bits stored in the plurality of memory cells for memory block K from N to J, where J is an integer less than N but greater than zero, in response to the error information.
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