After forming by using the lower-layer wiring 101 and upper wiring (not shown) via holes 102, an insulating film etching stopper film 104 and the hard mask 105 to 103 for connecting to, in the present invention; empty by the step low-power bias sputtering method to form a film 106 is not formed of Ta on the insulating film 103 so as to cover the inner wall of the hole 102. Here, it is possible to obtain via the inner wall surface of the insulating film 103, a thin film 106 is not of uniform thickness throughout over from the hole 102. As described above, thereby realizing relatively by a simple process without the risk of discomfort on the wiring formation, it enables the film forming the inner wall surface of the opening, that is, from the side wall to be thin over the bottom uniform film reliable ultra-fine wiring structure. ; The lower layer wiring, a via hole, an insulating film, etching stopper film, a hard mask, the underlying film
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