LOCOS ISOLATION FOR FULLY-DEPLETED SOI DEVICES

摘要

The present invention includes the steps of providing a substrate; Forming a buried oxide layer on a substrate; Forming a thin silicon body layer over the buried oxide layer, the thin silicon body layer having a thickness of 3-40 nanometers; Forming a pad oxide layer on the thin silicon body layer; Forming a silicon nitride layer on the pad oxide layer; Forming a photoresist on the silicon nitride layer; Forming openings in the photoresist; Removing the silicon nitride layer in the opening; Step of partially or completely removing the pad oxide layer in the opening; Removing the photoresist on the silicon nitride layer; Forming a field oxide layer from the thin silicon body layer in the opening; Removing the silicon nitride layer on the pad oxide layer; And post the method comprising the step of removing the pad oxide layer on the thin silicon body layer. The present invention is a substrate; A buried oxide layer disposed on the substrate; A thin silicon body layer disposed over the buried oxide layer, the thin silicon body layer comprising active regions separated by the separation zone, the separation zone that are 30-60% of the thickness of the thin silicon body layer modified bird's beak ( bird's beak) having a length; And active regions are also published to complete structure including a depletion type device disposed on each.