Fabrication method of dual damascene interconnections of microelectronics device using filler having porogen

摘要

Using the filler comprises a porous material produced is provided a wiring method of dual damascene microelectronic device that can minimize damage to the interlayer insulating film. Dual damascene method is connected to a via fill in with a filler comprising a porous material produced (porogen), by etching a part of the filler and an interlayer insulating film filling the via and the via to form a trench to be formed on the wiring. Subsequently, by removing the produced porous material of the filler remaining in the via after creating a porous filler material within, removing the porous filler and is produced, filling the trench and via a wiring material to complete the dual damascene wiring. ; Dual damascene, damage to the interlayer insulating film, the porous material produced