A PHOTOMASK USING SEPARATED EXPOSE TECHNIQUE, METHOD FOR FABRICATING THE PHOTOMASK AND AN APPARATUS FOR FABRICATING THE PHOTOMASK USING THE METHOD

摘要

A method for preparing a photomask, an apparatus for preparing a photomask, and a photomask prepared by the method are provided to form a pattern having uniform and precise line width rapidly. A method for preparing a photomask comprises the steps of preparing a substrate comprising a nontransparent layer and a first resist layer; firstly exposing the first exposure region(E1) adjacent to the pattern present on the first pattern region on the first resist layer by using the first exposure source of a first energy; developing the first resist layer to expose the nontransparent layer selectively to form a first resist pattern; etching the selectively exposed nontransparent layer by using with the first resist pattern as an etching mask to form a first nontransparent pattern; removing the first resist pattern; forming a second resist film on the first nontransparent pattern; secondly exposing the second exposure region(E2) of the first pattern region on the second resist layer except the first exposure region and the second pattern region by using the second exposure source of a second energy; developing the second resist layer to expose the first nontransparent pattern selectively to form a second resist pattern; etching the selectively exposed-first nontransparent pattern by using the second resist pattern as an etching mask to form a second nontransparent pattern; and removing the second resist pattern.