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Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method

机译:使用分离曝光技术的光掩模,制造光掩模的方法以及使用该方法制造光掩模的设备

摘要

A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
机译:一种制造光掩模的方法可以包括在基板上形成遮光层和第一抗蚀剂膜,通过将第一抗蚀剂膜的第一曝光区域暴露于可以具有第一能量的第一曝光源来形成第一抗蚀剂图案,通过使用第一抗蚀剂图案作为蚀刻掩模来蚀刻选择性暴露的光屏蔽层来形成第一光屏蔽图案,去除第一抗蚀剂图案,在第一光屏蔽层上形成第二抗蚀剂膜,暴露第二光致抗蚀剂的第二曝光区域。第二抗蚀剂膜可以具有对第二曝光源具有期望的图案形状的第二曝光源,第二曝光源可以具有第二能量,通过使用第二抗蚀剂图案作为蚀刻掩模来蚀刻选择性暴露的第一遮光图案来形成第二遮光图案,以及去除第二抗蚀剂图案。

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