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DESIGN METHOD OF MTCMOS SEMICONDUCTOR INTEGRATED CIRCUIT
DESIGN METHOD OF MTCMOS SEMICONDUCTOR INTEGRATED CIRCUIT
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机译:MTCMOS半导体集成电路的设计方法
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摘要
A design method of an MTCMOS(MultiThreshold voltage Complementary Metal Oxide Semiconductor) semiconductor integrated circuit is provided to change a configuration of MTCMOS semiconductor IC by simply correcting a power rail of a switch cell without changing a logic cell. A logic cell(401) includes a logic circuit having a first transistor, which is connected between a source voltage supply line(VDD) and a virtual ground voltage supply line(VGND) and has a first threshold voltage. A switch cell(403) includes a second transistor, which is connected between the virtual ground voltage supply line and a ground voltage supply line and has a second threshold voltage. The second threshold voltage is higher than the first threshold voltage. The second transistor is turned off, when the logic circuit is turned on. The switch cell is arranged in a standard cell region. A power rail is pre-routed by using a PG(Power Ground)-connection scheme in a place-and-route process. The logic cells are arranged.
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