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A method for testing of wafers with the use of a calibrating wafer and the associated calibrating brie wafer

机译:一种使用校准晶片和相关校准布里晶片的晶片测试方法

摘要

A method for testing of wafers (101) to be tested in a test device (100), in which the test device (100) can be calibrated, comprising the steps of:a) introducing (s301) of a calibrating wafer (102) in the testing device (100) by means of a handling unit (103), whereina1) at least one calibrating wafer (102) which, in terms of its geometry and its contact terminals (111) to be tested in an identical manner to a wafer (101), can be predetermined during at least a test flow, in the case of the wafer to be tested (101) are tested in the testing device (100) is introduced; anda2) calibrating of identical construction components (107) for different arrangements of contact terminals (111) are provided;b) determining (s302) of calibration values of the test means (100) by means of a control by means of a calibrating a sequence control unit (105);c) storing (s303) of the specific calibration values in a memory unit (106);d) calibrating (s304) of the test means (100) by means of the stored calibration values;e) outputting the calibrating wafer (102) of the calibrated test device (100);f) introducing (s301) of a wafer to be tested..
机译:一种用于在测试装置(100)中测试要测试的晶片(101)的方法,其中可以校准测试装置(100),该方法包括以下步骤:a)引入(s301)校准晶片(102)。借助于处理单元(103)将其放入测试设备(100)中,其中,a1)至少一个校准晶片(102),就其几何形状及其接触端子(111)而言,其校准方法与测试晶片相同。在将要测试的晶片(101)引入到测试装置(100)中的情况下,可以至少在测试流程期间预定晶片(101);并且a2)提供针对接触端子(111)的不同布置的相同构造部件(107)的校准; b)借助于借助于校准序列的控制来确定(s302)测试装置(100)的校准值控制单元(105); c)在存储单元(106)中存储(s303)特定校准值; d)通过存储的校准值校准(s304)测试装置(e304); e)输出校准测试设备(100)的校准晶圆(102); f)引入要测试的晶圆(s301)。

著录项

  • 公开/公告号DE10141025B4

    专利类型

  • 公开/公告日2007-05-24

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2001141025

  • 发明设计人

    申请日2001-08-22

  • 分类号H01L21/66;G01R31/28;

  • 国家 DE

  • 入库时间 2022-08-21 20:30:12

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