A method for the production of inp -, - the heterostructure bipolar transistors on the basis of iii / v - semiconductors

摘要

A process for the preparation of an indium phosphide - based heterostructure - bipolar transistor having the following method steps:(a) forming a layer sequence of a collector (1) is made of indium phosphide, a base (2) from a group iii / v - semiconductors and of an emitter (3),(b) subsequent masking a the emitter (3) overlapping region and implantation of ions in the non-masked area for the formation of an injured portion (7) of the base (2) and of the collector (1),(c) subsequent masking a part of the damaged area (7), wherein the in the process step (b) as well as a masked area to this region of adjoining part of the damaged area (7) are exposed,(d) application of a base - metallization (6) on the in the process step (c) is not masked region of the base (2), so that the base - metallization (6) the boundary region between the damaged area (7) and the damaged area overlaps,(e) subsequent masking a the emitter (3) overlapping region, and(f) removing the damaged area (7) of the base (2) and the collector..