Process involving formation of contact hole in intermediate layer of dielectric material to obtain connection to contact region of switching element useful in semiconductor production, especially for deposition of thin barrier layer

摘要

Process involving formation of contact hole in an intermediate layer of dielectric material to obtain a connection to the contact region of a switching element, deposition of Ti-based barrier layer in a contact hole and redistribution of the barrier layer material from the lower side of the contact hole to a lower side wall region by directed sputtering of an inert material on the base.