Increasing adhesion of metal layers comprises determination of regions of reduced contact hole density and formation of position-holding contacts with metal

摘要

The process comprises determining a region of reduced contact hole density in a metallic layer of a semiconductor element, forming a position-holding contact through guide (213) in this region and forming a metal region on the determined region that is connected to the through guide. Independent claims are also included for the following: (A) an additional process as above; and (B) a semiconductor component formed as above.