Metal wiring layer formation, for integrated circuit, involves forming metal nitride layer in contact hole, such that concentration of metal nitride layer at bottom of hole is less than that of metal nitride layer at opening of hole

摘要

A metal nitride layer (540) is formed within a contact hole (522), such that concentration of metal nitride layer at bottom of contact hole is less than that of metal nitride layer at opening of contact hole. A metal layer (550) is formed on the metal nitride layer. An independent claim is also included for metal wiring layer.