Electrical contact for optoelectronic semiconductor chip, has mirror layer containing metal or metal alloy, protective layer, which reduces corrosion of mirror layer, barrier layer, adhesion medium layer and solder layer

摘要

The electrical contact of optoelectronic semiconductor chip (1) has a mirror layer (2), a protective layer (3), a barrier layer (4), an adhesion medium layer (5) and a solder layer (8). The mirror layer contains metal or metal alloy. The protective layer reduces corrosion of mirror layer. The mirror layer contains silver, aluminum or platinum. The protective layer contains titanium or platinum. The barrier layer contains titanium-tungsten nitride (TiW (N)). The adhesion medium layer contains titanium. An independent claim is included for manufacture electrical contact.