Semiconductor memory device e.g. flash memory device for mobile device, receives several words of data and rearranges bits of words to be stored in memory cells

摘要

A sensing circuit sequentially senses several bits of each memory cell. A data rearrangement unit receives several words of data and rearranges bits of words to be stored in the memory cells. An output circuit outputs a group of words using the sets of bits from sensing, as early as during subsequent sensing of sets of bits. Independent claims are included for the following: (1) method of programming semiconductor memory device; and (2) method of reading semiconductor memory device.