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A method for the production of a gate - dielectric with variable dielectric constant
A method for the production of a gate - dielectric with variable dielectric constant
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机译:一种制备介电常数可变的栅介质的方法。
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摘要
A method for forming a gate dielectric having regions with different dielectric constants. A low-K dielectric layer is formed over a semiconductor structure. A dummy dielectric layer is formed over the low-K dielectric layer. The dummy dielectric layer and low-K dielectric layer are patterned to form an opening. The dummy dielectric layer is isontropically etched selectively to the low-K dielectric layer to form a stepped gate opening. A high-K dielectric layer is formed over the dummy dielectric and in the stepped gate opening. A gate electrode is formed on the high-K dielectric layer.
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