首页> 外国专利> METHOD FOR GROWING OPTICAL BIAXIAL SINGLE CRYSTAL AND OPTICAL BIAXIAL SINGLE CRYSTAL PRODUCED BY USING THE METHOD

METHOD FOR GROWING OPTICAL BIAXIAL SINGLE CRYSTAL AND OPTICAL BIAXIAL SINGLE CRYSTAL PRODUCED BY USING THE METHOD

机译:生长光学双轴单晶和使用该方法生产的光学双轴单晶的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for growing an optical biaxial single crystal characterized in that working of a grown optical biaxial single crystal is not complicated and the proportion of the grown optical biaxial single crystal to be actually used for devices to the grown optical biaxial single crystal is high, and to provide an optical biaxial single crystal produced by using the method.;SOLUTION: In the method for growing the optical biaxial single crystal utilizing an EFG method comprising bringing a seed crystal 20 into contact with a heat-melted raw melt and growing a single crystal 21 into a thin plate form, the single crystal 21 is grown into the thin plate form by controlling the angle θ2 formed by a ridge line D in the longitudinal direction of rectangular dies which form a liquid reservoir for the raw melt and the optical axis L20 of the seed crystal 20 to the range of 85° to 95° and controlling the angle θ1 formed by the optical axis L20 of the seed crystal 20 and the direction Z of the pull-up shaft which pulls up the seed crystal 20 to the range of 85° to 95°.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种用于生长光学双轴单晶的方法,其特征在于,生长的光学双轴单晶的工作并不复杂,并且所生长的光学双轴单晶在器件中实际用于该光学双轴的比例双轴单晶的含量高,并提供通过该方法生产的光学双轴单晶。解决方案:在利用EFG方法生长光学双轴单晶的方法中,包括使籽晶20与热熔接触原料熔融,将单晶21生长成薄板状,通过控制由形成储液槽的矩形模具的长度方向上的棱线D形成的角度θ2,使单晶21生长成薄板状。晶种20的原始熔体和光轴L 20 在85°的范围内变化。到95°控制由籽晶20的光轴L 20 和将籽晶20上拉的上拉轴的方向Z形成的角度θ1在85°的范围内。到95°..COPYRIGHT:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008156179A

    专利类型

  • 公开/公告日2008-07-10

    原文格式PDF

  • 申请/专利权人 COVALENT MATERIALS CORP;

    申请/专利号JP20060348957

  • 发明设计人 MATSUMURA TAKASHI;

    申请日2006-12-26

  • 分类号C30B15/34;

  • 国家 JP

  • 入库时间 2022-08-21 20:23:51

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