NITRIDE GALLIUM-BASED EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE NITRIDE GALLIUM-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride gallium-based semiconductor light-emitting device, having a structure capable of reducing the distribution of a light-emitting wavelength of an active layer, including a well layer provided to a nitride gallium substrate.;SOLUTION: A material gas is allowed to flow to a flow channel 23 of an organic metal vapor phase growing furnace 21. The material gas for forming an active layer is supplied from one end of the main surface 25a of susceptor 25, in a direction across the other end (direction of arrow A). GaN substrates 27a-27c are disposed on the main surface 25a of the susceptor. An off angle changes simply on a line segment from one point on an edge of the main surface of each of gallium nitride substrates 27a-27c to the other end of the edge. The orientation of each of the GaN substrates 27a-27c is indicated by the direction of orientation flat. By having the plurality of gallium nitride substrates 27a-27c disposed on the susceptor 25 of the organic metal vapor phase growing furnace 21 on the basis of the orientation, the influence due to the flow of the material gas is utilized and the influence of the distribution of off angles is reduced.;COPYRIGHT: (C)2009,JPO&INPIT