MANUFACTURING METHOD FOR VERTICAL-STRUCTURE GaN-BASED LED DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide a manufacturing method for a vertical-structure GaN-based LED device capable of enhancing the optical extraction efficiency of the LED device by minimizing the thickness of the GaN substrate. PSOLUTION: The manufacturing method for this vertical-structure GaN-based LED device comprises a step to prepare an n-type GaN substrate 110, a step to form an active layer 120 and p-type nitride semiconductor layer 130 in that sequence on the upper surface of the n-type GaN substrate by an epitaxial growth method, a step to form a p-type electrode 140 on the p-type nitride semiconductor layer, a step to wet-etch the bottom surface of the n-type GaN substrate for reducing the thickness of the n-type GaN substrate, a step to form a flat n-type bonding pad 160 to demarcate an n-type electrode forming region on the bottom surface of the n-type GaN substrate that has been wet-etched, and a step to form an n-type electrode 150 on the n-type bonding pad. PCOPYRIGHT: (C)2008,JPO&INPIT