AMMONIA PRODUCT FOR MANUFACTURING GaN-BASED COMPOUND SEMICONDUCTOR, METHOD OF MANUFACTURING GaN-BASED COMPOUND SEMICONDUCTOR, AND METHOD OF MANUFACTURING AMMONIA FOR MANUFACTURING GaN-BASED COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing GaN-based compound semiconductors capable of surely manufacturing GaN-based compound semiconductors of excellent light emitting performance, and to provide an ammonia product for manufacturing GaN-based compound semiconductors and a method for manufacturing ammonia for manufacturing GaN-based compound semiconductors.;SOLUTION: The ammonia product for manufacturing GaN-based compound semiconductors is provided with a filling container 18 and ammonia filled in the filling container 18 in such a way that at least a part thereof is in a liquid state, wherein the water concentration in the liquid-phase ammonia is 0.5 vol ppm or lower, and the material of the filling container 18 is manganese steel or an aluminum alloy.;COPYRIGHT: (C)2008,JPO&INPIT