Structure and the method of producing the PMOS device in the compressed strain Ge inside layer (integration of strain Ge to advanced CMOS technology)

摘要

Topic Structure and the method of producing the PMOS device in the compressed strain Ge inside layer are disclosed.Solutions Production method of this kind of device conforms to standard CMOS technology, it is scaling possible completely. The said processing, includes the selective epitaxial accumulation of buffer layer, pure Ge layer, and SiGe first layer of the Ge content which exceeds 50%. In order hosuteingu to be done in compressed strain Ge layer, the pad channel type PMOS which is produced shows the device quality of predominance vis-a-vis the similar Si device. Selective figure Figure 1