MANUFACTURING METHOD FOR EMBEDDED SILICON-GERMANIUM STRAIN PMOS DEVICE STRUCTURE

摘要

A manufacturing method for an embedded silicon-germanium strain PMOS device structure, comprising: before growing SiGe in a PMOS source/drain groove area using the method of selective epitaxy, firstly, injecting metal Ge into the source/drain groove area, and forming a strained SiGe alloy through annealing; and then taking the strained SiGe alloy as a substrate, continuously growing a strained SiGe layer thereon using the method of selective epitaxy. Therefore, when SiGe grows epitaxially, the direct contact with the silicon in the substrate is avoided, thereby suppressing the formation of a defect on an SiGe/Si interface; and a phenomenon of electric leakage of a junction caused by having a defect on the SiGe/Si interface can be suppressed while it is ensured to exert an appropriate stress on a channel of the PMOS device, so that the entire electrical property of the PMOS device is improved, and the existing process can have good compatibility.