SEMICONDUCTOR LASER DEVICE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR LASER GYRO USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device in which a preferred dielectric multilayer film is provided at an end.;SOLUTION: This manufacturing method comprises step (i) of forming a semiconductor multilayer film 20 containing an active layer on a substrate 11; step (ii) of etching the semiconductor multilayer film 20, thereby exposing a first and second end so as to have a convex curved face toward the outside; and the step (iii) of depositing a reflective film 15 (dielectric multilayer film) on the second end 24b by a gas phase growing method. The step is carried out in such a state that the upper face side of the semiconductor multilayer film 20 is press held down by a first plate 71, the rear face side of the substrate 11 is pressed by a second plate 72, and the second end 24b is projected at a distance H (20 μm or more) from the first plate 71.;COPYRIGHT: (C)2008,JPO&INPIT