The semiconductor dynamics where it is supported production manner of the semiconductor dynamic quantitative sensor, and when

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor mechanical sensor and a semiconductor pressure sensor at a low cost by a method wherein an N-type semiconductor layer is selectively formed at the support part and the stationary electrode forming part of a sensing structure, or a P-type semiconductor layer is selectively formed at a non-support structure part, a porous silicon layer is formed on the surface of a substrate through anodization, and etching is carried out by making the porous silicon layer serve as a sacrifice layer. ;SOLUTION: An N-type layer 16 is selectively formed on a part of a P-type silicon substrate 3 where an anchor of beam structure and stationary electrodes 10 and 12 are formed, and then a porous silicon layer 3a is formed by anodization. The porous silicon layer 3a is patterned by an LTSiN 17 for the formation of a silicon layer 18a, the beam structure and the stationary electrodes 10 and 12 are formed by etching, an oxide layer 3b is formed by oxidizing the porous silicon layer 3a, and etching is carried out by making the oxide layer 3b serve as a sacrifice layer, whereby the beam structure and the stationary electrodes 10 and 12 are formed. Two silicon substrates are not required to be laminated together.;COPYRIGHT: (C)2000,JPO