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The high high election mobility transistor which is produced from layer of the 13th family element nitride (HEMT) and its production method
The high high election mobility transistor which is produced from layer of the 13th family element nitride (HEMT) and its production method
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机译:由第十三族元素氮化物层制造的高高迁移率晶体管及其制造方法
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摘要
The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs. Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).
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