Quantum semiconductor memory device and method for reading quantum semiconductor memory device

摘要

PROBLEM TO BE SOLVED: To hold information in quantum dots stably over a long time in a quantum semiconductor device by a method wherein the quantum dots form a distortion system to a substrate. ;SOLUTION: In the case where information is written in quantum dots 35, a gate voltage VG applied to a gate electrode G is increased to a positive side, and holes are injected from a hole feeding layer 37 into the quantum dots 35 via a barrier layer 36 by tunneling. Moreover, in the case of erasing information from the dots 35, the gate voltage VG is changed to a negative side and the holes are extracted from the dots 35 to the layer 37. Accordingly, a material system for forming a type II hetero-junction is selected for the dots, and the holes are used as carriers, whereby the depth of a carrier confinement potential v in the dots becomes deeper, and a stable holding of the information becomes possible even at room temperatures generating a substantial thermal excitation.;COPYRIGHT: (C)2000,JPO