Semiconductor memory device, a semiconductor manufacturing method of a storage device, the reading method of a semiconductor memory device writing method and a semiconductor memory device

摘要

It is a simple construction (issues) the memory cell, is to provide a semiconductor memory device which realizes a high density of memory cells. The drain 18 of the selection transistor 14 (SOLUTION) memory cell 10 is connected to an electrode 12c on one side of the resistance memory element 12, the word line WL, the first group of memory cells disposed along the word line WL is connected to the electrode 12a of the other of the resistive memory element of the plurality is connected to the gate G of the select transistor 14 contained multiple, contained in the memory cell group of the first bit line BL is the bit line It is connected to the source 16 of the selection transistor 14 contained multiple group of memory cells disposed second along the BL. [Selection Figure Figure 2