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Formation of a Selective Carbon-Doped Epitaxial Cap Layer on Selective Epitaxial SiGe
Formation of a Selective Carbon-Doped Epitaxial Cap Layer on Selective Epitaxial SiGe
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机译:在选择性外延SiGe上形成选择性碳掺杂外延盖层
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摘要
A method for forming epitaxial SiGe of a PMOS transistor. In an example embodiment, the method may include providing a semiconductor wafer having a PMOS transistor gate stack, extension sidewalls, source/drain extension regions, and active regions. The method may also include performing a recess etch of the active regions and forming epitaxial SiGe within the recessed active regions by forming a selective epi SiGe region coupled to the surface of the recessed active regions and a selective carbon-doped epitaxial cap layer coupled to the selective epi SiGe region.
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