Low contact resistance ohmic contact for a high electron mobility transistor and fabrication method thereof

摘要

A semiconductor device (100) is formed on a semi-insulating semiconductor substrate (101) including a channel layer (104), a spacer layer (105), an electron supply layer (106), and a barrier layer (108). A composite layer (110) is formed over the barrier layer (108). A metal (116) is deposited over the composite layer (110). The metal (116) is annealed to promote a chemical reaction between the metal (116) and the composite layer (110) in which a portion of the metal sinks into the composite layer (110) and forms an ohmic contact with the composite layer.