Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films

摘要

The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H₃, preferably of the formula (R¹R²N)SiH₃ wherein R¹ and R² are selected independently from C₂ to C₁₀ and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stess as compared to films from thermal chemical vapor deposition.