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Semiconductor die edge reconditioning

机译:半导体芯片边缘修整

摘要

An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.
机译:集成电路具有半导体衬底和机械上相对较弱并且易于破裂和分层的互连层。在由半导体晶片形成集成电路的过程中,切穿互连层以形成互连层的边缘。这种切割可能会完全贯穿整个晶圆厚度,或者没有这样做就停止。在任一种情况下,在切穿互连层之后,在互连层的边缘上形成修整层。该修复层密封了现有的裂缝和分层,并抑制了互连层的进一步分层或破裂。密封层可以例如在切割晶片之前,切割晶片之后但在任何封装之前,或者在互连层和集成电路封装之间执行引线键合之后形成。

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