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Buffer layer for selective SiGe growth for uniform nucleation
Buffer layer for selective SiGe growth for uniform nucleation
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机译:用于选择性SiGe生长以实现均匀成核的缓冲层
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摘要
Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed.
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