首页>
外国专利>
Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
展开▼
机译:具有具有氧化层和定向隧穿势垒的富钛下电极的磁性随机存取存储器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
展开▼