Method and system for device level simulation of large semiconductor memories and other circuits

摘要

A method for device level simulation of a circuit modeled by a set of CCR graphs, a computer system programmed to perform such a method, and a computer readable medium which stores code for implementing such a method. Typically, the circuit includes MOS transistors having unknown gate potentials, each CCR graph includes a top rail, and a bottom rail, and variable nodes, each of the transistors having unknown gate potential is modeled in the CCR graphs as a selectable resistor having a selected one of a first resistance and a much larger second resistance, and the method includes the steps of determining potentials at variable nodes of one of the CCR graphs with each selectable resistor of the graph having its first resistance (and also with each selectable resistor of the graph having its second resistance) without determining effective resistances between the variable nodes of the graph and the top rail or bottom rail.