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Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same
Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same
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机译:具有不对称沟道区的晶体管,包括该晶体管区的半导体器件以及包括该晶体管的半导体器件的制造方法
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摘要
According to embodiments of the invention, a transistor includes a semiconductor substrate having an active region. A channel trench is disposed to cross the active region. A gate insulating layer covers an inner wall of the channel trench. A gate pattern is disposed to fill the channel trench and to extend over a main surface of the semiconductor substrate. Source/drain regions having a first conductivity are disposed in the active region at both sides of the channel trench. A channel impurity region having a second conductivity is disposed beneath one of the source/drain regions to be in contact with at least a sidewall of the channel trench.
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