Devices with HfSiON dielectric films which are Hf-O rich

摘要

A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO₂. The HfSiON layer thickness is controlled by repeating for a number of cycles a sequence including pulsing a hafnium containing precursor into a reaction chamber, pulsing an oxygen containing precursor into the reaction chamber, pulsing a silicon containing precursor into the reaction chamber, and pulsing a nitrogen containing precursor until a desired thickness is formed. Dielectric films containing atomic layer deposited HfSiON are thermodynamically stable such that the HfSiON will have minimal reactions with a silicon substrate or other structures during processing.