METHOD OF REGULATING CONCENTRATION OF CHARGE CARRIERS IN PbSnSe ERITAXIAL LAYERS

摘要

The invention relates to semi-conductors technology and can be used in designing semi-conductor devices, in particular, to highly sensitive infrared photodetector with maximum possible high working temperatures.The inventive feature of the method for regulating concentration of charge carriers in PbSnSe epitaxial layers is characterized in that the source is the PbSnSe alloys in the range of compositions X = 0.04 – 0.12 containing additionally Cr – 0.6 at % or In – 1 at %, using a narrow range of the source temperatures 480-490°C, substrate 390-400°C and additional selenium source 102-104°C.