首页> 外国专利> HIGH DENSITY CERAMIC AND CERMET SPUTTERING TARGETS BY MICROWAVE SINTERING

HIGH DENSITY CERAMIC AND CERMET SPUTTERING TARGETS BY MICROWAVE SINTERING

机译:微波烧结高密度陶瓷和金属陶瓷的靶材

摘要

HIGH DENSITY CERAMIC AND CERMET SPUTTERING TARGETS BY MICROWAVESINTERING Abstract of the DisclosureA method of manufacturing sputtering targets from powder materials, comprising steps of. providing at least one raw powder material; forming the at least one raw powder material into a green body with density greater than about 40 % of theoretical maximum density;treating the green body with microwaves to form a sintered body with density greater than about 97 % of theoretical maximum density; and forming a sputtering target from the sintered body. The methodology is especially useful in the fabrication of targets comprising dielectric and cermet materials:Figure 1
机译:微波高密度陶瓷和金属陶瓷溅射靶烧结披露摘要一种由粉末材料制造溅射靶的方法,包括步骤。提供至少一种粉末原料;形成至少一种原料粉末将材料制成生坯,其密度大于理论最大密度的约40%;用微波处理生坯以形成密度大于约50μm的烧结体理论最大密度的97%;从烧结体形成溅射靶。该方法在制造包括电介质和金属陶瓷材料:图1

著录项

  • 公开/公告号SG145671A1

    专利类型

  • 公开/公告日2008-09-29

    原文格式PDF

  • 申请/专利权人 HERAEUS INC.;

    申请/专利号SG20080015935

  • 申请日2008-02-26

  • 分类号C23C14/34;B22F3/12;C04B35/01;C04B35/04;C04B35/64;

  • 国家 SG

  • 入库时间 2022-08-21 20:05:34

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