Plasma etch reactor with dual sources for enhancing both etch selectivity and etch rate

摘要

A plasma reactor 100 for processing a semiconductor workpiece, said reactor includes a counter electrode 160 adjacent the reactor chamber ceiling 110 and facing the workpiece support pedestal 115, with a first RF power source connected between said workpiece support pedestal and said counter electrode. Plural MERIE magnets 130 are spaced along said side wall 105 for generating a slowly rotating magnetic field within said chamber and gas injection ports supply process gases into the chamber. A second RF power source is connected to an inductive coil antenna 180 overlying the ceiling. The counter electrode is conductive but has plural current-blocking apertures 190 therein that permit inductive coupling of RF power from said coil antenna to plasma in said chamber through said counter electrode.